1/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.08 - rev.a 1.5v drive nch mosfet RUQ050N02 ? structure silicon n-channel mosfet ? features 1) low on-resistance. 2) space saving, small surf ace mount package (tsmt6). 3) 1.5v drive ? applications switching ? packaging specifications packagecode taping basic ordering unit (pieces) RUQ050N02 tr 3000 type ? absolute maximum ratings (ta=25 ? c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltagegate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 20 150 55 to + 150 10 5.0 10 1.0 10 1.25 ? thermal resistance parameter c/w rth(ch-a) symbol limits unit c hannel to ambient 100 ? mounted on a ceramic board ? ? dimensions (unit : mm) ? inner circuit each lead has same dimensions tsmt6 abbreviated symbol : xg (1) drain(2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (6)(1) (5)(2) (4)(3) sot-457t downloaded from: http:///
2/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.08 - rev.a data sheet RUQ050N02 ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltagezero gate voltage drain current gate threshold voltagestatic drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed 10 av gs = 10v, v ds =0v v dd 10v, 20 vi d = 1ma, v gs =0v 1 av ds = 20v, v gs =0v 0.3 1.0 v v ds = 10v, i d = 1ma 22 30 i d = 5.0a, v gs = 4.5v 27 38 m m m i d = 5.0a, v gs = 2.5v 32 45 m i d = 2.5a, v gs = 1.8v 40 80 i d = 1.0a, v gs = 1.5v 6.5 sv ds = 10v, i d = 5.0a 900 pf v ds = 10v 190120 pf v gs =0v 15 pf f=1mhz 25 ns 70 ns 100 ns 12 ns 2.5 nc 1.7 nc v gs = 4.5v nc i d = 5.0a v dd 10v i d = 2.5a v gs = 4.5v r l 4 r g =10 r l 2 , r g =10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd 1.2 v i s = 1.0a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ? downloaded from: http:///
3/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.08 - rev.a data sheet RUQ050N02 ? electrical characteristics curves drain-source voltage : v ds (v) 10 1000 100 10000 0.01 0.1 1 10 10 0 capacitance : c (pf) fig.1 typical capacitance vs. drain-source voltage ta=25cf=1mhz v gs =0v ciss coss crss drain current : i d (a) 0.01 1 10 100 1000 0.1 1 1 0 switching time : t (ns) fig.2 switching characteristics ta=25cv dd =10v v gs =4.5v r g =10 pulsed tf tr td (off) td (on) total gate charge : qg (nc) 0 10 2 4 53 6 61 2 41 0 2 8 14 1 6 gate-source voltage : v gs (v) fig.3 dynamic input characteristics ta=25 c v dd =10v i d =5a r g =10 pulsed gate-source voltage : v gs (v) 0.2 1 0.1 0.001 0.01 10 0.4 0.8 1.2 0.6 1.0 1.4 1.6 drain current : i d (a) fig.4 typical transfer characteristics v ds =10v pulsed ta=125cta=75c ta=25c ta= 25c gate-source voltage : v gs (v) 023 1 0 60 4020 456 89 71 0 static drain-source on-state resistance : r ds (on) (m ) fig.5 static drain-source on-state resistance vs . gate-source voltage ta=25cpulsed i d =5.0a i d =2.5a source-drain voltage : v sd (v) 0.0 0.5 1.0 0.01 10 1 0.1 1 .5 source current : i s (a) fig.6 source current vs. source-drain voltage v gs =0v pulsed ta=125cta=75c ta=25c ta= 25c drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125cta=75c ta=25c ta= 25c drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) v gs =2.5v pulsed ta=125cta=75c ta=25c ta= 25c fig.8 static drain-source on-state resistance vs. drain current ( ? ) drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) v gs =1.8v pulsed ta=125cta=75c ta=25c ta= 25c fig.9 static drain-source on-state resistance vs. drain current ( ?? ) downloaded from: http:///
4/4 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.08 - rev.a data sheet RUQ050N02 drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) v gs =1.5v pulsed ta=125cta=75c ta=25c ta= 25c fig.10 static drain-source on-state resistance vs . drain current ( ) drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) ta=25cpulsed v gs =1.5v v gs =1.8v v gs =2.5v v gs =4.5v fig.11 static drain-source on-state resistance vs . drain current ( ) drain current : i d (a) 0.01 0.1 1 0.1 100 10 1 1 0 forward transfer admittance : yfs (s) v ds =10v pulsed fig.12 forward transfer admittanc e vs. drain current ta=125 c ta=75 c ta=25 c ta= 25 c ? measurement circuit f ig.13 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.14 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) f ig.15 gate charge measurement circu it v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.16 gate charge waveform v g v gs charge q g q gs q gd downloaded from: http:///
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